研究方向
1. 硅基微电子器件
2. 射频集成电路设计
3. 微电子器件模型模拟
代表性科研论文
1. Hai Jiang, Xiaoyan Liu, Nuo Xu, Yandong He, Gang Du, and Xing Zhang, Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs, IEEE Electron Device Letters, 36(12):1258-1260, 2015.
2. Hai Jiang, Nuo Xu, Bing Chen, Lang Zeng, Yandong He, Gang Du, Xiaoyan Liu, Xing Zhang, Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs, Semiconductor Science and Technology, 29(11):115021-1-7, 2014.
3. Fei Tan, Ru Huang, Xia An, Yimao Cai, Yue Pan, Weikang Wu, Hui Feng, Xing Zhang, and YangYuan Wang, Investigation on the Response of TaOx-based Resistive Random-Access Memories to Heavy-Ion Irradiation, IEEE Transactions on Nuclear Science, 60(6):4520-4525, 2013.
4. Zhiqiang Li ; Xia An ; Quanxin Yun ; Meng Lin ; Min Li ; Ming Li ; Xing Zhang ; Ru Huang, Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Multiple Implantation and Multiple Annealing Technique, IEEE Electron Device Letters, 34(9):1097-1099, 2013.
5. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, Ru Huang, Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation, IEEE Electron Device Letters, 34(5):596-598, 2013.
6. Wenliang Bai, Ru Huang, Yimao Cai, Yu Tang, Xing Zhang, Yangyuan Wang, Record Low-Power Organic RRAM With Sub-20-nA Reset Current, IEEE Electron Device Letters, 34(2):223-225, 2013.
7. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, Ru Huang, Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique, IEEE Electron Device Letters, 33(12):1687-1689, 2012.
8. Xingye Zhou, Feng Liu, Lining Zhang, Cheng Wang, Jin He, Xing Zhang, Mansun Chan, Unified Scale Length for Four-Terminal Double-Gate MOSFETs, IEEE Transactions on Electron Devices, 59(7):1997-1999, 2012.
9. Yue Guo, Xia An, Runsheng Wang, Xing Zhang, Ru Huang, Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment for Germanium-Based Technology, IEEE Electron Device Letters, 32(4)554-556, APRIL 2011.
10. Shoubin Xue, Pengfei Wang, Ru Huang, Xing Zhang, Investigation of the off-State Behavior in Deep-Submicrometer NMOSFETs Under Heavy-Ion Irradiation by 3-D Simulation, IEEE Transactions on Device and Materials Reliability, 11(1):13-18, 2011.
